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| DC COMPONENTS CO., LTD. R 2SA1300 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) TO-92 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCES VCEO VEBO IC IC IB PD TJ TSTG o C) Rating -20 -20 -10 -6 -2 -5 -2 750 +150 -55 to +150 Unit V V V V A A A mW o o Symbol .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEO BVEBO ICBO IEBO (1) Min -10 -6 140 60 - Typ -0.3 -0.83 140 50 Max -100 -100 -0.5 -1.5 1000 - Unit V V nA nA V V MHz pF Test Conditions IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-20V, IE=0 VBE=-6V, IC=0 IC=-2A, IB=-50mA IC=-2A, VCE=-1V IC=-0.5A, VCE=-1V IC=-2A, VCE=-1V IC=-0.5A, VCE=-1V VCE=-10V, f=1KHz, IE=0 Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat) VBE hFE1 hFE2 fT Cob 380s, Duty Cycle 2% Classification of hFE1 Rank Range Y 140~280 GR 200~400 BL 300~600 PE 500~1000 |
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